Abstract
Oxidation tests on silicon carbide samples were carried out in a facility specifically developed at ONERA partly to simulate atmospheric re-entry conditions. Thermogravimetric data and surface analyses have shown the effect of low pressure and dissociated species on the oxidation of SiC. The transition between active and passive oxidation is well related to thermodynamic equilibrium between SiC and SiO2 and does not seem influenced by low dissociated oxygen. On the contrary, atomic oxygen has a drastic effect on the kinetics of formation as well as the structure of the oxide layer and the phenomenon of silica vaporization.
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Berton, B., Bacos, M.P., Demange, D. et al. High-temperature oxidation of silicon carbide in simulated atmospheric re-entry conditions. J Mater Sci 27, 3206–3210 (1992). https://doi.org/10.1007/BF01116013
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DOI: https://doi.org/10.1007/BF01116013