Abstract
Low-pressure chemical vapour deposition of siliconcarbide from tetramethyl silane pyrolysis was studied by X-ray diffractometry.In situ measurements at high temperature gave kinetic information. The crystallization state, grain size, microstrains and residual macrostresses were measured at room temperature.
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References
E. Fitzer andD. Hegen,Angew. Chem. Int. Ed. Ergl. 18 (1979) 295.
C. Combescure andB. Armas, in “Colloque International sur les matériaux durs pour le frottement dans les réacteurs nucléaires” (Societé Française d'Energie Nucleaire, Avignon, 1980) pp. 65–71.
J. F. Lartigue andF. Sibieude,Rev. Int. Hautes Temp. Refract. 22 (1985) 71.
A. Guinier (ed.), in “Théorie et technique de la radiocristallographie” (Dunod, Paris, 1956) p. 235.
J. F. Lartigue, Thèse, I.N.P. Grenoble, France (1985).
H. P. Klug andL. E. Alexander, in “X-ray diffraction procedures” (Wiley, New York, 1974) p. 643.
T. H. de Keijser, J. I. Langford, E. J. Mittemeijer andA. B. P. Vogels,J. Appl. Crystallogr. 15 (1982) 308.
Idem,15 (1982) 625.
G. Moeder, J. L. Lebrun andJ. M. Sprauel, Mater. techniq. April-May (1981) 135.
J. Schlichting,Powder Metall. Int. 12(3) (1980) 141.
Idem, ibid. 12 (4) (1980) 196.
M. Turpin andA. Robert,Proc. Brit. Ceram. Soc. 22 (1972) 327.
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Sibieude, F., Benezech, G. Chemical vapour deposition of silicon carbide: An X-ray diffraction study. J Mater Sci 23, 1632–1636 (1988). https://doi.org/10.1007/BF01115701
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DOI: https://doi.org/10.1007/BF01115701