Abstract
Electrophysical properties are studied in epitaxial cadmium selenide films produced by condensation on common mica and fluorophlogopite substrates over a wide range of substrate temperatures (Ts). It is shown that under conditions close to equilibrium highly perfect layers are produced with charge carrier mobility up to 300 cm2/V · sec and concentration ∼ 1016 cm−3. The temperature dependence of carrier concentration and mobility are studied in undoped and doped CdSe films. The values of the intercrystallite energy barriers are determined in layers condensed at differing Ts. It is shown that at Ts>630‡C the charge carrier diffusion mechanism is close to that of a monocrystal, while for a barrier diffusion mechansim (Ts<630‡C) the character of the energy barriers for the cubic and hexagonal phases in CdSe is somewhat different. Donor-level ionization energy and ionized center concentration are determined.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 23–29, August, 1975.
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Bogomolov, N.S., Ezhovskii, Y.K. & Kalinkin, I.P. Conductivity peculiarities in epitaxial layers of cadmium selenide. Soviet Physics Journal 18, 1078–1083 (1975). https://doi.org/10.1007/BF01110024
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DOI: https://doi.org/10.1007/BF01110024