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Electronic defects in heterogeneous CuInS2

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Abstract

The difference in photoactivity between CuInS2 crystals grown by chemical vapour transport (CVT) and new heterogeneous material containing phases of Cu2−x S and In2S3 in the mol % range is analysed. Photoluminescence, time resolved microwave conductivity (TRMC) experiments and photocurrent spectroscopy demonstrate a strongly reduced defect density in the heterogeneous samples. EBIC analyses show the terraces occurring from vapour-liquid-solid (VLS) growth of the heterogeneous material to act as recombination sites.

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Author notes

  1. H. Goslowsky

    Present address: Chemistry Department, North Carolina State University, 27650, Raleigh, North Carolina, USA

Authors and Affiliations

  1. Bereich Strahlenchemie, Hahn-Meitner-Institut für Kernforschung, Glienicker Strasse 100, D-1000, Berlin 39, FRG

    H. J. Lewerenz, K. -D. Husemann, M. Kunst, H. Goslowsky & S. Fiechter

  2. Chemistry Department, North Carolina State University, 27650, Raleigh, North Carolina, USA

    H. Neff

Authors
  1. H. J. Lewerenz
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  2. K. -D. Husemann
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  3. M. Kunst
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  4. H. Goslowsky
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  5. S. Fiechter
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  6. H. Neff
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Lewerenz, H.J., Husemann, K.D., Kunst, M. et al. Electronic defects in heterogeneous CuInS2 . J Mater Sci 21, 4419–4423 (1986). https://doi.org/10.1007/BF01106565

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  • DOI: https://doi.org/10.1007/BF01106565

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