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Effect of X-ray and electron radiation on p-n junctions in gallium arsenide

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References

  1. Tunnel Diodes and Their Use in Switching Circuits and Superhigh Frequency Devices [Russian Translation], ed. A. A. Vizel, Moscow, p. 39, 1965.

  2. Z. Ya. Kleiman and T. A. Stefanova, Izv. VUZ. Fizika,2, 1964.

  3. M. A, Krivov and S. V. Malyanov, Izv. VUZ. Fizika [Soviet Physics Journal],4, 1966.

  4. M. A. Krivov, S. V. Malyanov, and V. I. Gaman, Izv. VUZ. Fizika [Soviet Physics Journal] (in press).

  5. M. A. Krivov, S. V. Malyanov, and V. 1. Gaman, Izv. VUZ. Fizika [Soviet Physics Journal] (in press).

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Authors and Affiliations

  1. Kuznetsov Siberian Physico-Technical Institute, USSR

    M. A. Krivov & S. V. Malyanov

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  1. M. A. Krivov
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  2. S. V. Malyanov
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Krivov, M.A., Malyanov, S.V. Effect of X-ray and electron radiation on p-n junctions in gallium arsenide. Soviet Physics Journal 9, 76–77 (1966). https://doi.org/10.1007/BF01103200

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  • DOI: https://doi.org/10.1007/BF01103200

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