Abstract
Results are given on experiments on the effect of X-rays on the conductivity and concentration of charge carriers and their mobility in monocrystalline silicon with electron and hole conductivity.
It is shown that changes in the parameters studied due to X-rays depend on the intensity of the irradiation and are similar in hole and in electron silicon.
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Krivov, M.A., Potakhova, G.I. The effect of X-rays on the electrophysical properties of silicon and silicon p-n junctions. Soviet Physics Journal 9, 30–33 (1966). https://doi.org/10.1007/BF01103182
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DOI: https://doi.org/10.1007/BF01103182