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Potential distribution in rectifier elements of the type Al-Bi-Se-Insulator-Cd-Sn alloy

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Soviet Physics Journal Aims and scope

Abstract

Results are given from measurements in the forward and reverse directions; in both cases the main potential drop occurs in the region of the junction. Calculations are presented for the resistance of the various layers in the forward direction. Photomicrographs of sections of specimens AVS and TVS indicate the desirability of replacing sand blasting of the Al base of AVS rectifiers by ultrasonic or chemical etching.

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References

  1. A. V. Bakaev, I. Kh. Keller, V. A. Dorin, P. M. Zakharov, D. N. Nasledov, and R. A. Solov'ev, Zavodskaya Laboratoriya, no. 10, 1961.

  2. A. Z. Levinzon, Semiconductor Rectifiers [in Russian], 1948.

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Authors and Affiliations

  1. Kalinin Leningrad Polytechnic Institute, USSR

    R. A. Solov'ev

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  1. R. A. Solov'ev
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Solov'ev, R.A. Potential distribution in rectifier elements of the type Al-Bi-Se-Insulator-Cd-Sn alloy. Soviet Physics Journal 9, 18–20 (1966). https://doi.org/10.1007/BF01103178

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  • DOI: https://doi.org/10.1007/BF01103178

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