Abstract
The degree of perfection of diffusion layers in gallium arsenide was investigated experimentally in relation to the surface concentration of zinc, the arsenic vapor pressure, the diffusion temperature, and the cooling conditions of the specimens after diffusion. By optical microscopy and X-ray diffraction it was shown that diffusion layers of gallium arsenide can be very strongly disrupted during the diffusion of zinc, and their structure may frequently approach that of mosaic crystals. This disruption is caused mainly by dislocations, which may exceed 107/cm2 in density. The disruptions are lower with lower surface concentration of zinc, with high arsenic vapor pressures (1.5 atm) compared with the normal, and with lower diffusion temperatures.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. J. Queisser, J. Appl. Phys.,32, 9, 1776, 1961.
S. J. Prussin, J. Appl. Phys.,32, 10, 1876, 1961.
I. M. Sukhodreva, FTT,6, 2, 320, 1964.
R. J. Jaccodine. Appl. Phys. Let.,4, 6, 114, 1964.
G. H. Schwuttke and H. J. Queisser. Bull. Am. Phys. Soc., 2, 146, 1964.
V. M. Al'tshuller, Report on All-Union Conference on Diffusion of Impurities in Semiconductors [in Russian], Leningrad, 1964.
Q. H. Schwutke and H. Rupprecht. Bull. Am. Phys. Soc.,5, 543, 1964.
J. Black and P. Lublin. J. Appl. Phys.,35, 8, 2462, 1964.
A. Bürger and S. Šebek. Slaboproudy obzor,22, 7, 407, 1961.
R. L. Batdorf, A. G. Chynoweth, G. C. Dacey, and P. W. Foy. J. Appl. Phys.,31, 1, 1153, 1960.
U. Bardsli, UFN,73, 1, 121, 1961.
B. G. Zakharov and S. S. Khludkov, Report on Eighth Scientific and Technical Conference on the Use of X-Rays in Investigation of Materials [in Russian], Leningrad, 1964.
S. S. Khludkov and E. I. Andrievskii, B. G. Zakharov, and V. A. Presnov, Report on All-Union Conference on the Diffusion of Impurities in Semiconductors [in Russian], Leningrad, 1964.
V. K. Subashiev and S. A. Poltinnikov, FTT,2, 6, 1169, 1960.
B. G. Zakharov, Kristallografiya,10, 3, 442, 1965.
B. G. Zakharov, Kristallografiya,11, 2, 227, 1966.
B. G. Zakharov, Kristallografiya (in press), 1966.
P. F. Schmidt and R. Stickler. J. Electrochem. Soc.,111, 10, 1188, 1964.
T. N. Bateman, H. J. Meskimin, and J. M. Whelan. J. Appl. Phys.,30, 4, 544, 1959.
B. I. Boltaks, T. D. Dzhafarov, V. I. Sokolov, and F. S. Shishiyanu, FTT, 6, 5, 1511, 1964.
F. A. Cunnell and C. H. Gooch. Phys. Chem. Solids., 15, 1–2, 127, 1960.
Author information
Authors and Affiliations
Additional information
The authors wish to convey their gratitude to V. A. Presnov and M. P. Yakubene for discussing the results and taking an interest in the work
Rights and permissions
About this article
Cite this article
Zakharov, B.G., Khludkov, S.S. Investigation of the perfection of diffusion layers obtained in the diffusion of zinc in gallium arsenide. Soviet Physics Journal 9, 7–12 (1966). https://doi.org/10.1007/BF01103176
Issue Date:
DOI: https://doi.org/10.1007/BF01103176