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Photoelectric parameters of the heterojunctions ITO-CdGeP2

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Abstract

Photosensitive n-n and n-p structures based on CdGeP2 crystals and layers of indium and tin oxides were prepared by the method of reactive cathodic sputtering. The photoelectric properties of the structures in natural and linearly polarized light were studied, and the temperature dependence of the photosensitivity in the interval 80–400 K was also measured. The polarization parameters of heterojunctions were determined, and the results were analyzed based on a model of the band spectrum and the selection rules for interband transitions in CdGeP2. It is shown that n-n heterojunctions can be employed as polarimetric photodetectors.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, USSR

    A. V. Lunev, Yu. V. Rud', M. A. Tairov & Yu. K. Undalov

Authors
  1. A. V. Lunev
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  2. Yu. V. Rud'
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  3. M. A. Tairov
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  4. Yu. K. Undalov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 39–44, August, 1988.

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Lunev, A.V., Rud', Y.V., Tairov, M.A. et al. Photoelectric parameters of the heterojunctions ITO-CdGeP2 . Soviet Physics Journal 31, 639–643 (1988). https://doi.org/10.1007/BF01102540

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  • DOI: https://doi.org/10.1007/BF01102540

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