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Effect of boron implantation in CdTe on the spectrum of deep levels in intercrystalline barriers

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Abstract

The effect of boron ion implantation on the spectrum of deep levels and the properties of potential barriers of obliquely sputtered cadmium telluride films are studied. By comparing experimental data on the spectral dependence of short circuit current and photoconductivity to the theoretical curves for photon capture cross sections the optical ionization energy is determined for four levels. It is established that ion implantation and thermal processing in vacuum at 100°C of obliquely sputtered cadmium telluride films substantially impacts the parameters of 1.13–1.16 eV deep levels located in the region of potential barriers and leads to the transformation of impurity complexes in intercrystalline barriers and in microcrystals. The nature of these levels is discussed.

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Authors and Affiliations

  1. Vil'nius State University, USSR

    Yu. Yu. Vaitkus, F. D. Senulis & S. M. Otazhonov

Authors
  1. Yu. Yu. Vaitkus
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  2. F. D. Senulis
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  3. S. M. Otazhonov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 35–38, August, 1988.

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Vaitkus, Y.Y., Senulis, F.D. & Otazhonov, S.M. Effect of boron implantation in CdTe on the spectrum of deep levels in intercrystalline barriers. Soviet Physics Journal 31, 635–638 (1988). https://doi.org/10.1007/BF01102539

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  • DOI: https://doi.org/10.1007/BF01102539

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