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Kinetics of nonconservative liquid phase epitaxy of semiconductors

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Abstract

An expression is obtained for the stationary growth rate for two- and three-component systems in the diffusion mode on the basis of a detailed analysis of the components in the liquid phase and on its boundaries. It is shown that the solution-melt experiences a hydrodynamic flow opposite to the crystallization boundary at a velocity close to the growth rate in value. Also revealed are the singularities of the kinetics of the process in three-component systems that are associated with unbalanced identically directed diffusion fluxes of components forming a stoichiometric semiconducting compound.

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Authors and Affiliations

  1. Sergo Ordzhonikidze Novocherkassk Polytechnic Institute, USSR

    V. P. Popov

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  1. V. P. Popov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 15–19, August, 1988.

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Popov, V.P. Kinetics of nonconservative liquid phase epitaxy of semiconductors. Soviet Physics Journal 31, 619–622 (1988). https://doi.org/10.1007/BF01102535

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  • DOI: https://doi.org/10.1007/BF01102535

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