Abstract
The possibility of localization of a bifluctuon near an impurity center in ideal paramagnetic semiconductors and ideal solid solutions with equal concentrations of both components is investigated. Calculations with symmetric and antisymmetric wave functions showed that in solutions the studied formation is energetically favored for all values of the energy of exchange interaction of electrons with the concentration nonuniformity and the energy of coulomb attraction of electrons to the center, while in magnets it is energetically favored only for large values of the atomic spins and in a not very wide temperature interval.
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Kiev Polytechnical Institute dedicated to the Fiftieth Anniversary of the Great October Socialist Revolution.
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 10–15, August, 1988.
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Trushchenko, A.A. Bifluctuon, localized on an impurity center in magnetic semiconductors and binary solid solutions. Soviet Physics Journal 31, 615–619 (1988). https://doi.org/10.1007/BF01102534
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DOI: https://doi.org/10.1007/BF01102534