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Positive temperature dependence of emission from abrupt gallium arsenide p+-n junctions

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Literature cited

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 24, No. 1, pp. 147–149, January, 1976.

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Osinskii, V.I., Peshko, A.Y. Positive temperature dependence of emission from abrupt gallium arsenide p+-n junctions. J Appl Spectrosc 24, 103–105 (1976). https://doi.org/10.1007/BF01100733

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  • DOI: https://doi.org/10.1007/BF01100733

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