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Some photoelectric and electrical properties of copper-doped gallium arsenide

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Abstract

A study has been made of the conditions for the formation of impurity centers having an ionization energy E v + 0.1 eV in copper-doped gallium arsenide. Photoconductivity is demonstrated at 10.6 μ. The results of the photoconductivity study are used to calculate the absorption coefficient and cross section for photon capture by these impurity centers.

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Literature cited

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    A. V. Voitsekhovskii, G. A. Zakharova, M. A. Krivov & E. V. Malisova

Authors
  1. A. V. Voitsekhovskii
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  2. G. A. Zakharova
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  3. M. A. Krivov
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  4. E. V. Malisova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 40–44, September, 1970.

The authors thank V. N. Detinko, A. S. Petrov, and A. P. Vyatkin for constant interest in this study.

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Voitsekhovskii, A.V., Zakharova, G.A., Krivov, M.A. et al. Some photoelectric and electrical properties of copper-doped gallium arsenide. Soviet Physics Journal 13, 1154–1157 (1970). https://doi.org/10.1007/BF01100544

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  • DOI: https://doi.org/10.1007/BF01100544

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