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Dopant diffusion in phases with a moving interface

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Abstract

We consider the diffusion of a dopant through a moving interface in the suicide film-Si system during silicide layer growth. The dopant concentration distribution is derived in analytical form by the integral Fourier transform method with subsequent reduction of the dopant redistribution problem to numerical solution of two integral equations. The results are presented in the form of curves plotting the time dependence of dopant concentration on both sides of the interface for various values of diffusion coefficients and interface velocity. The effect of physical parameters on the variation of dopant concentration near the interface is demonstrated.

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References

  1. J. Poate, K. Tu, and J. Mayer, Thin Films: Interdiffusion and Reactions, Wiley, New York (1978).

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  2. R. A. Powell and R. Chow, “Dopant redistribution in silicides. Materials and process issues,” J. Vacuum Sci. and Technol.,B2, No. 4, 718–722 (1984).

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  3. G. J. Van Gurp, “Cobalt silicide layers on Si. II. Schottky barrier height and contact resistivity,” J. Appl. Phys.,46, No. 10, 4308–4311 (1975).

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Authors and Affiliations

  1. Institute of Cybernetics, Ukrainian Academy of Sciences, Ukrainian Agricultural Academy, Ukraine

    G. A. Chechko, A. T. Karpus', Yu. Z. Prokhur & V. N. Sklepovoi

  2. Kiev University, USSR

    G. A. Chechko, A. T. Karpus', Yu. Z. Prokhur & V. N. Sklepovoi

Authors
  1. G. A. Chechko
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  2. A. T. Karpus'
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  3. Yu. Z. Prokhur
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  4. V. N. Sklepovoi
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Additional information

Translated from Vychislitel'naya i Prikladnaya Matematika, No. 63, pp. 93–97, 1987.

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Chechko, G.A., Karpus', A.T., Prokhur, Y.Z. et al. Dopant diffusion in phases with a moving interface. J Math Sci 66, 2203–2206 (1993). https://doi.org/10.1007/BF01098608

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  • DOI: https://doi.org/10.1007/BF01098608

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