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The effect of technology on the low-frequency noise of Schottky barrier diodes

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Radiophysics and Quantum Electronics Aims and scope

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Literature Cited

  1. T. G. M. Kleinpenning, Solid-State Electron.,22, No. 2-A, 121 (1979).

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  2. V. M. Malyshev and V. G. Usychenko, Izv. Vyssh. Uchebn. Zaved., Radiofiz.,32, No. 5, 632 (1989).

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Authors
  1. M. D. Dmitriev
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  2. A. V. Yakimov
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Additional information

St. Petersburg State Engineering University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 36, No. 5, pp. 456–459, May, 1993.

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Dmitriev, M.D., Yakimov, A.V. The effect of technology on the low-frequency noise of Schottky barrier diodes. Radiophys Quantum Electron 36, 289–292 (1993). https://doi.org/10.1007/BF01091433

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  • DOI: https://doi.org/10.1007/BF01091433

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