Abstract
The formation of SiO(g) from SiC by either active oxidation or an oxidation-reduction process is discussed. The Wagner criterion for the transition from active to passive oxidation is generalized for any oxidant. Kinetic modeling of both active oxidation and oxidation-reduction is described.
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Abbreviations
- α:
-
\((MW_{O_2 } - MW_C )/MW_{SiO_2 } \)
- β:
-
\(MW_{O_2 } /MW_{SiO_2 } \)
- γ:
-
MW SiC/MW Si
- δCO :
-
CO(g) boundary layer thickness
- δox :
-
gaseous-oxidant, boundary layer thickness
- ζ:
-
stoichiometric factor from Eqs. (2)–(4), # of CO produced/# of oxidant (on oxygen atom basis)
- ν:
-
gas viscosity
- ϱ:
-
concentration of diffusing gas species in boundary layer
- ϱ′:
-
concentration of major gas species in boundary layer
- ϱoxide :
-
density of SiO2
- D :
-
diffusion coefficient of diffusing species in gas-boundary layer
- D CO :
-
diffusion coefficient of CO(g)
- D ox :
-
gas diffusion coefficient of oxidant
- J :
-
flux, rate of weight loss limited by diffusion in gas-boundary layer
- J CO :
-
flux of CO(g)
- J ox :
-
flux of gaseous oxidant
- K g :
-
linear oxide growth constant, weight/(length2 time)
- k ′ g :
-
linear oxide growth constant, length/time
- k l :
-
linear volatilization constant for SiO2,k lo+k ls, weight/(length2 time)
- k lo :
-
linear volatilization constant for oxygen from SiO2, weight/(length2 time)
- k ls :
-
linear volatilization constant for silicon from SiO2, weight/(length2 time)
- k ′ l :
-
linear volatilization constant for SiO2, length/time
- k p :
-
parabolic oxide growth constant, weight2/(length4 time)
- k ′ p :
-
parabolic oxide growth constant, length2/time
- L :
-
sample length parallel to gas flow direction
- (ΔM/A)1 :
-
specific weight change due to oxygen gain and associated carbon loss in paralinear oxidation
- (ΔM/A)1L :
-
limiting value of weight change due to oxygen gain and associated carbon loss in paralinear oxidation
- (ΔM/A)2 :
-
specific weight change due to silicon loss and associated carbon loss in paralinear oxidation
- MW C :
-
molecular weight of carbon
- \(MW_{O_2 } \) :
-
molecular weight of O2
- MW Si :
-
molecular weight of silicon
- MW SiC :
-
molecular weight of silicon carbide
- \(MW_{SiO_2 } \) :
-
molecular weight of silica
- n :
-
number of oxygen atoms per oxidant molecule
- P eqCO :
-
eqiilibrium CO(g) pressure
- P gCO :
-
CO(g) pressure outside of boundary layer
- P iCO :
-
CO(g) pressure at SiC-gas interface
- P gox :
-
oxidant gas pressure outside of boundary layer
- P iox :
-
oxidant gas pressure at SiC-gas interface
- R :
-
gas constant
- t :
-
time
- T :
-
absolute temperature
- v :
-
linear gas velocity
- x :
-
oxide thickness
- x L :
-
limiting oxide thickness achieved in paralinear oxidation
- x t :
-
oxide thickness at which transition from linear to parabolic growth occurs
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Opila, E.J., Jacobson, N.S. SiO(g) formation from SiC in mixed oxidizing-reducing gases. Oxid Met 44, 527–544 (1995). https://doi.org/10.1007/BF01051042
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DOI: https://doi.org/10.1007/BF01051042