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Mode self-locking conditions in a semiconductor injection laser with external cavity

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Radiophysics and Quantum Electronics Aims and scope

Abstract

The results of computer and analytical investigations of the temporal structure characteristics of dc-pumped injection lasers are presented, taking the refractive nonlinearity in GaAs optical semiconductors into account. Kinetic equations for the light field and inverse population of a laser diode that is optically conjugate to the external cavity are qualitatively analyzed. It is shown that mode self-locking can be achieved without additional modulators, using only the self-modulation effect due to the nonlinear active layer of the laser diode.

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Authors
  1. V. A. Yurevich
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Institute of Applied Optics, Belorussian Academy of Sciences, Mogilev. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 38, No. 11, pp. 1204–1212, November, 1995.

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Yurevich, V.A. Mode self-locking conditions in a semiconductor injection laser with external cavity. Radiophys Quantum Electron 38, 786–791 (1995). https://doi.org/10.1007/BF01047079

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  • DOI: https://doi.org/10.1007/BF01047079

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