Abstract
High-resolution SIMS and TEM have been used to evaluate growth processes and interfacial segregation occurring in α-Al2O3 scales grown at 1200°C on β-NiAl containing zirconium or yttrium.18O/SIMS shows that the extent of aluminum diffusion occurring during α-Al2O3 growth is reduced by the presence of these alloying elements, which are seen by SIMS imaging as oxide particles within the scale. STEM/EDS of the same oxide scales show that zirconium and yttrium also segregated to the oxide-alloy interface to the extent, respectively, of ≈0.15 and ≈0.07 of a monolayer and to oxide grain boundaries (≈0.2 monolayer). The complementary information provided by SIMS, TEM, and STEM provides a better understanding of the role of “reactive elements” in modifying scale-growth processes.
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Schumann, E., Yang, J.C., Rühle, M. et al. High-resolution SIMS and analytical TEM evaluation of alumina scales onβ-NiAl containing Zr or Y. Oxid Met 46, 37–49 (1996). https://doi.org/10.1007/BF01046883
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DOI: https://doi.org/10.1007/BF01046883