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Effect of oscillation amplitude on noise in gallium arsenide impatt diode oscillators with uniform doping profile

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Leningrad Electrotechnical Communications Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 26, No. 3, pp. 380–388, March, 1983.

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Kornilov, S.A., Pavlov, V.M. Effect of oscillation amplitude on noise in gallium arsenide impatt diode oscillators with uniform doping profile. Radiophys Quantum Electron 26, 279–286 (1983). https://doi.org/10.1007/BF01045109

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  • DOI: https://doi.org/10.1007/BF01045109

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