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Sheet resistance and noise properties of ion-implanted silicon structures

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Abstract

Experimental-study results are presented on the sheet resistance and low-frequency current-noise spectra in silicon layers that have been implanted by phosphorous and boron ions as functions of the conditions of implantation and post-implantation heat treatment. Results of evaluation of the Pearson implantation profiles are presented to explain the obtained dependences, and data in the literature on defects in ion-implanted silicon are cited. The noise spectra are analyzed using Hooge's empirical formula.

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References

  1. M. I. Makoviichuk, Preprint Inst. Microelectronics Acad. Sci. USSR, Yaroslavl' (1989).

  2. V. V. Batavin, Yu. A. Kontsevoi, and Yu. V. Fedorovich, Measurement of the Parameters of Semiconductor Materials and Structures [in Russian], Radio i Svyaz', Moscow (1985).

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  3. M. I. Makoviichuk, S. O. Ostrova, I. G. Stoyanova, and V. Yu. Troitskii, Materials of Seminar “Electrofluctuation Diagnosis of Materials and Products of Microelectronics” [in Russian], Kazan' (1983), p. 55.

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Authors
  1. A. N. Valov
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  2. M. I. Makoviichuk
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  3. V. A. Rekshinskii
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Additional information

Institute of Microelectronics, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 36, No. 12, pp. 1136–1142, December, 1993.

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Valov, A.N., Makoviichuk, M.I. & Rekshinskii, V.A. Sheet resistance and noise properties of ion-implanted silicon structures. Radiophys Quantum Electron 36, 852–855 (1993). https://doi.org/10.1007/BF01039700

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  • DOI: https://doi.org/10.1007/BF01039700

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