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Theory of the oscillations of ultrasound attenuation in a semiconductor in a high-frequency electric field

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Radiophysics and Quantum Electronics Aims and scope

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Literature Cited

  1. É. M. Épshtein, FTT, No. 10, 2945 (1968).

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  2. Y. Abe and N. Mikoshiba, Japan J. Appl. Phys.,7, No. 8, 881 (1968).

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Authors
  1. É. M. Épshtein
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Additional information

Moscow Institute of Electronic Angineering. Translated from Izvestiya VUZ. Radiofizika, Vol. 12, No. 12, pp. 1869–1872, December, 1969.

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Épshtein, É.M. Theory of the oscillations of ultrasound attenuation in a semiconductor in a high-frequency electric field. Radiophys Quantum Electron 12, 1459–1461 (1969). https://doi.org/10.1007/BF01039073

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  • DOI: https://doi.org/10.1007/BF01039073

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