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Effect of silicon-wafer preoxidation on the low-frequency noise of mis structures

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Authors
  1. G. P. Zhigal'skii
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  2. M. G. Putrya
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  3. A. S. Fedorov
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Additional information

Institute of Electronic Engineering, Moscow. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 32, No. 9, pp. 1158–1165, September, 1989.

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Zhigal'skii, G.P., Putrya, M.G. & Fedorov, A.S. Effect of silicon-wafer preoxidation on the low-frequency noise of mis structures. Radiophys Quantum Electron 32, 862–868 (1989). https://doi.org/10.1007/BF01038815

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  • DOI: https://doi.org/10.1007/BF01038815

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