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Wandering defects: A source of 1/f noise?

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Radiophysics and Quantum Electronics Aims and scope

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References

  1. M. Buckingham, Noise in Electronic Devices and Systems [Russian translation], Mir, Moscow (1986).

    Google Scholar 

  2. Sh. M. Kogan, Usp. Fiz. Nauk,145, No. 2, 285 (1985).

    Google Scholar 

  3. A. N. Malakhov, V. B. Orlov, and A. V. Yakimov, in: Low-Frequency Noise in Semiconductor Instruments and Devices [in Russian], Gorky State University, (1989), p. 21; Article deposited at VINITI, Reg. No. 5713-V90, (Nov. 12, 1990).

  4. V. B. Orlov and A. V. Yakimov, Physica B,162, 13 (1990).

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Authors
  1. A. L. Mladentsev
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  2. A. V. Yakimov
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Additional information

Nizhny Novgorod State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 36, No. 8, pp. 843–847, August, 1993.

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Mladentsev, A.L., Yakimov, A.V. Wandering defects: A source of 1/f noise?. Radiophys Quantum Electron 36, 579–582 (1993). https://doi.org/10.1007/BF01038441

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  • DOI: https://doi.org/10.1007/BF01038441

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