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Additional information
Moscow Power Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 17, No. 2, pp. 228–237, February, 1974
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Bogachev, V.M., Smol'skii, S.M. The stability of oscillations and transients in high-frequency transistor oscillators having inertial self-bias. Radiophys Quantum Electron 17, 172–179 (1974). https://doi.org/10.1007/BF01037406
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DOI: https://doi.org/10.1007/BF01037406