Literature Cited
A. Van Der Ziel, Fluctuation Phenomena in Semiconductors [Russian translation], IL, Moscow (1961).
A. S. Vrachev, Izv. Vyssh. Uchebn. Zaved., Radiofiz.,23, No. 12, 1464 (1980).
A. S. Vrachev, Tr. Mosk Energ. Inst., No. 288, 118 (1976).
N. N. Goryunov and V. N. Amazaspyan, Electronic Engineering: Quality Control and Standardization [in Russian], No. 4 (1972), p. 20.
A. Van Der Ziel and T. Hu, Electronics39, No. 24, 95 (1966).
A. S. Vrachev, Tr. Mosk. Energ. Inst., No. 334 78 (1977).
V. S. Pryanikov, Prediction of Semiconductor Device Breakdown [in Russian], Énergiya, Moscow (1978).
A. S. Vrachev, Tr. Mosk Energ. Inst., No. 375, 67 (1978).
A. N. Malakov and A. V. Yakimov, Radiotekh. Elektron.,19, No. 11, 2436 (1974).
Additional information
Moscow Energy Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 23, No. 12, pp. 1470–1472, December, 1980.
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Vrachev, A.S. Thermodynamic approach to the problem of low-frequency noise. II. Radiophys Quantum Electron 23, 977–979 (1980). https://doi.org/10.1007/BF01033466
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DOI: https://doi.org/10.1007/BF01033466