Parametric analysis for a millimeter wave low noise high electron mobility transistor

  • Asu Ram Jha
Article
  • 18 Downloads

Abstract

This paper presents parametric analysis for low noise High Electron Mobility Transistor (HEMT) devices suitable for mm-wave radar, satellite communication, and radiometric applications. Preliminary computations reveal that pseudomorphic HEMT devices using InGaAs/GaAs heterojunction structures offer significant improvements in power added efficiency, noise figure, gain, reliability, and input power requirements compared to standard HEMT's. A Pseudomorphic HEMT device is capable of providing a room temperature noise fiqure of 3.5dB and small signal gain of 3dB at 95 GHz, approximately.

Keywords

Radar Input Power Parametric Analysis Electron Mobility High Electron 

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References

  1. 1.
    Microwaves and RF, page 176, march 1987.Google Scholar
  2. 2.
    P. M. Smith, P. C. Chao, Khg Kuh, L. F. Lester, B. R. Lee and J. M. Ballingale, “Advances in HEMT Technolgy and Applications,” 1987-MTT International Microwave Symposium, June 1987.Google Scholar

Copyright information

© Plenum Publishing Corporation 1988

Authors and Affiliations

  • Asu Ram Jha
    • 1
  1. 1.Principal Engineer/ScientistDouglas Aircraft CompanyLong Beach

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