Parametric analysis for a millimeter wave low noise high electron mobility transistor
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This paper presents parametric analysis for low noise High Electron Mobility Transistor (HEMT) devices suitable for mm-wave radar, satellite communication, and radiometric applications. Preliminary computations reveal that pseudomorphic HEMT devices using InGaAs/GaAs heterojunction structures offer significant improvements in power added efficiency, noise figure, gain, reliability, and input power requirements compared to standard HEMT's. A Pseudomorphic HEMT device is capable of providing a room temperature noise fiqure of 3.5dB and small signal gain of 3dB at 95 GHz, approximately.
KeywordsRadar Input Power Parametric Analysis Electron Mobility High Electron
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