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Hyperfine Interactions

, Volume 6, Issue 1–4, pp 175–176 | Cite as

The paramagnetic state (μ+e) in silicon and tellurium at high temperature

  • I. I. Gurevich
  • I. G. Ivanter
  • B. A. Nikolsky
  • A. N. Ponomarev
  • V. S. Roganov
  • V. I. Selivanov
  • V. A. Suetin
Article

Abstract

The paramagnetic state (μ+e) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: τSi = 1.45(3) μs, τTe = 12.5(8) μs at 290 K, τTe = 12(2) μs at 250 K.

Keywords

Silicon Magnetic Field Thin Film Tellurium Paramagnetic State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. /1/.
    I. I. Gurevich, B. A. Nikolsky, V. I. Selivanov, B. V. Sokolov, J. E. T. P.68, 806, 1975.Google Scholar

Copyright information

© North-Holland Publishing Company 1979

Authors and Affiliations

  • I. I. Gurevich
    • 1
  • I. G. Ivanter
    • 1
  • B. A. Nikolsky
    • 1
  • A. N. Ponomarev
    • 1
  • V. S. Roganov
    • 1
  • V. I. Selivanov
    • 1
  • V. A. Suetin
    • 1
  1. 1.I. V. Kurchatov Institute of Atomic EnergyMoscowUSSR

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