The paramagnetic state (μ+e−) in silicon and tellurium at high temperature
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The paramagnetic state (μ+e−) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: τSi = 1.45(3) μs, τTe = 12.5(8) μs at 290 K, τTe = 12(2) μs at 250 K.
KeywordsSilicon Magnetic Field Thin Film Tellurium Paramagnetic State
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- /1/.I. I. Gurevich, B. A. Nikolsky, V. I. Selivanov, B. V. Sokolov, J. E. T. P.68, 806, 1975.Google Scholar
© North-Holland Publishing Company 1979