Hyperfine Interactions

, Volume 6, Issue 1–4, pp 175–176 | Cite as

The paramagnetic state (μ+e) in silicon and tellurium at high temperature

  • I. I. Gurevich
  • I. G. Ivanter
  • B. A. Nikolsky
  • A. N. Ponomarev
  • V. S. Roganov
  • V. I. Selivanov
  • V. A. Suetin
Article

Abstract

The paramagnetic state (μ+e) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: τSi = 1.45(3) μs, τTe = 12.5(8) μs at 290 K, τTe = 12(2) μs at 250 K.

Keywords

Silicon Magnetic Field Thin Film Tellurium Paramagnetic State 

References

  1. /1/.
    I. I. Gurevich, B. A. Nikolsky, V. I. Selivanov, B. V. Sokolov, J. E. T. P.68, 806, 1975.Google Scholar

Copyright information

© North-Holland Publishing Company 1979

Authors and Affiliations

  • I. I. Gurevich
    • 1
  • I. G. Ivanter
    • 1
  • B. A. Nikolsky
    • 1
  • A. N. Ponomarev
    • 1
  • V. S. Roganov
    • 1
  • V. I. Selivanov
    • 1
  • V. A. Suetin
    • 1
  1. 1.I. V. Kurchatov Institute of Atomic EnergyMoscowUSSR

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