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Journal of Materials Science

, Volume 19, Issue 9, pp 2845–2854 | Cite as

Investigation of the surface morphology of ion-bombarded biocompatible materials with a SEM and profilograph

  • Zbigniew W. Kowalski
Papers

Abstract

The surface morphology (topography and roughness) is a very important factor which affects the response of biological tissue to an implant material. The effect of an incident ion beam on surface morphology of various biocompatible materials was studied. All materials were bombarded by Ar+ ions at an applied voltage of 7 kV at various incident angles from 0 to 1.4 rad (0 to 80°) and at a beam current up to 0.1 mA. The surface topographies of ion-bombarded samples were examined with a Japan Electron Optics Laboratory, model JSM-35, scanning electron microscope. The roughness of the surface was calculated from the shape of a surface profile, which was recorded by a profilograph, the ME10 (supplied by VEB Carl Zeiss, Jena).

Keywords

Polymer Japan Electron Microscope Scanning Electron Microscope Surface Morphology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    B. A. Banks, A. J. Wiegand, Ch. A. Babbush andC. L. Van Kampen, NASA TM X-73512 (1976).Google Scholar
  2. 2.
    A. J. Wiegand, NASA TM-78851 (1978).Google Scholar
  3. 3.
    G. J. Picha, NASA CR 159817 (1980).Google Scholar
  4. 4.
    B. A. Banks, NASA TM-81721 (1981).Google Scholar
  5. 5.
    Z. W. Kowalski,J. Mater. Sci 18 (1983) 2531.Google Scholar
  6. 6.
    H. R. Kaufman andR. S. Robinson,J. Vac. Sci. Tecchnol. 16 (1979) 175.Google Scholar
  7. 7.
    R. S. Robinson, NASA CR-159567 (1979).Google Scholar
  8. 8.
    Z. W. Kowalski,J. Mater. Sci. 17 (1982) 2599.Google Scholar
  9. 9.
    I. W. Rangelow andZ. W. Kowalski,Beitr. elektronenmikroskop. Direktabb. Oberfl. 15 (1982) 27.Google Scholar
  10. 10.
    A. J. Wiegand, M. L. Meyer andJ. S. Ling, NASA TMX-3553 (1977).Google Scholar
  11. 11.
    W. R. Hudson,J. Vac. Sci. Technol. 14 (1977) 286.Google Scholar
  12. 12.
    Z. W. Kowalski andI. W. Rangelow,J. Mater. Sci. 18 (1983) 741.Google Scholar
  13. 13.
    M. Lukaszewicz andZ. W. Kowalski,ibid. 16 (1981) 302.Google Scholar
  14. 14.
    A. H. Heuer, R. F. Firestone, J. D. Snow, H. W. Green andR. G. Howe,Rev. Sci. Instrum. 42 (1971) 1177.Google Scholar
  15. 15.
    C. G. Crockett,Vacuum 23 (1972) 11.Google Scholar
  16. 16.
    M. Lukaszewicz andW. Hauffe, Proceedings of the Conference on Elelectron Technology, Science Papers of IET of Wrocław Technical University No. 24, Conferences No. 4. (Wyd. Pol. Wrocl., Wrocław, 1980) p. 234.Google Scholar
  17. 17.
    P. Laty, D. Seethanen andF. Degreve,Surf. Sci. 85, (1979) 353.Google Scholar
  18. 18.
    Z. W. Kowalski,J. Mater. Sci. 17 (1982) 1627.Google Scholar
  19. 19.
    D. J. Barber, F. C. Frank, M. Moss, J. W. Steeds andI. S. T. Tsong,ibid. 8 (1973) 1030.Google Scholar
  20. 20.
    G. Carter, J. S. Colligon andM. J. Nobes,ibid. 6 (1971) 115.Google Scholar
  21. 21.
    Idem., ibid. 8 (1973) 1473.Google Scholar
  22. 22.
    J. P. Ducommun, M. Cantagrel andM. Marchal,ibid. 9 (1974) 725.Google Scholar
  23. 23.
    J. P. Ducommun, M. Cantagrel andM. Moulin,ibid. 10 (1975) 52.Google Scholar
  24. 24.
    D. J. Mazey, R. S. Nelson andP. A. Thackery,ibid. 3 (1968) 26.Google Scholar
  25. 25.
    R. S. Nelson andD. J. Mazey,Rad. Effects 18 (1973) 127.Google Scholar
  26. 26.
    I. A. Teodorescu andF. Vasiliu,ibid. 15 (1972) 101.Google Scholar
  27. 27.
    A. R. Bayly andP. D. Townsend,J. Phys. D: Appl. Phys. 5 (1972) L103.Google Scholar
  28. 28.
    N. Bibić, T. Nenadović andB. Perović, Proceedings of the 7th International Vacuum Congress, 3rd International Conference on Solid Surfaces, Vienna 1977, p. 1485.Google Scholar
  29. 29.
    R. S. Dhariwal andR. K. Fitch,J. Mater. Sci. 12 (1977) 1225.Google Scholar
  30. 30.
    M. J. Nobes, J. S. Colligon andG. Carter,ibid. 4 (1969) 730.Google Scholar
  31. 31.
    P. Sigmund,ibid. 8 (1973) 1545.Google Scholar
  32. 32.
    A. D. G. Steward andM. W. Thompson,ibid. 4 (1969) 56.Google Scholar
  33. 33.
    J. L. Whitton,Rad. Effects 32 (1977) 129.Google Scholar
  34. 34.
    I. H. Wilson,ibid. 18 (1973) 95.Google Scholar
  35. 35.
    D. J. Barber,Beitr. elektronenmikroskop. Direktabb. Oberfl. 5 (1972) 585.Google Scholar
  36. 36.
    N. Hermanne andA. Art,Rad. Effects 5 (1970) 203.Google Scholar
  37. 37.
    M. Navez, C. Sella andD. Chaperot, Colloques Internationaux CNRS, Bellevue, December 1962, p. 233.Google Scholar
  38. 38.
    I. S. T. Tsong andD. J. Barber,J. Mater. Sci. 7 (1972) 687.Google Scholar
  39. 39.
    I. H. Wilson andM. W. Kidd,ibid. 6 (1971) 1362.Google Scholar
  40. 40.
    M. Tarasevich,Appl. Opt. 9 (1970) 173.Google Scholar

Copyright information

© Chapman and Hall Ltd 1984

Authors and Affiliations

  • Zbigniew W. Kowalski
    • 1
  1. 1.Technical University of WrocławWrocławPoland

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