Abstract
Recent Mössbauer measurements of the isomer shift of interstitially implanted119Sn impurities in group IV semiconductors are interpreted in terms of the electron contact density of compressed Sn atoms and ions, respectively. The finite space allowed to the impurity atom in the host crystal is approximated by a Wigner-Seitz sphere. Using a calibration procedure, the dependence of the isomer shift on the Wigner-Seitz radiusR A has been calculated for several electron configurations of the tin atom (ion). The isomer shift values for119Sn interstitials in diamond, silicon, germanium, and α-tin are found to correspond to compressed, neutral tin atoms; furthermore, the relaxation of the host lattice about the impurity Sn atom is discussed.
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Antoncik, E. Interpretation of the isomer shift of interstitially implanted119Sn impurities in group IV semiconductors. Hyperfine Interact 8, 161–171 (1980). https://doi.org/10.1007/BF01026867
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DOI: https://doi.org/10.1007/BF01026867