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Interpretation of isomer shifts of substitutional119Sn and129I in group IV semiconductors

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Abstract

The measurements of the isomer shift in Mössbauer effect of substitutionally implanted119Sn and129I atoms in group IV semiconductors show that the contact density of 5s electrons at the impurity ńucleus decreases when going from Ge to Si and diamond. A satisfactory interpretation of this dependence can be given based on a simple perturbation approach: Interaction of the host crystal with the bonding valence electrons of the impurity atom causes a charge redistribution of these electrons and results in decrease of occupancy of the 5s level at the impurity atom. Some general aspects of this problem with substitutional isoelectronic and donor impurities are discussed.

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  1. Institute of Physics, University of Aarhus, Denmark

    E. Antončík

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  1. E. Antončík
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Antončík, E. Interpretation of isomer shifts of substitutional119Sn and129I in group IV semiconductors. Hyperfine Interact 1, 329–344 (1975). https://doi.org/10.1007/BF01022465

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  • DOI: https://doi.org/10.1007/BF01022465

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