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Boolchand, P., van Rossum, M., Langouche, G. et al. Mössbauer effect studies following ion implantation of125I and125mTe radioactivities in crystalline Ge. Hyperfine Interact 2, 371–373 (1976). https://doi.org/10.1007/BF01021178
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DOI: https://doi.org/10.1007/BF01021178