Abstract
Information is provided on the theory and design, fabrication, and experimental results for a phase shifter designed to operate in the millimeter wavelength region. The device was fabricated in a manner that makes it compatible with present GaAs monolithic microwave circuit technology. Continuously variable phase shift is obtained by varying the bias voltage from −5.0 to +0.65 V on a Schottky microstrip line. Experimental phase shift and loss data are provided for two different width (w) Schottky lines, w=1.5 and 7.3 μm, for frequencies 2–18 GHz.
Similar content being viewed by others
References
R. E. Neidert and C. M. Krowne, “Voltage Variable Microwave Phase Shifter,” Electronics Letters, Vol. 21, pp. 636–638, July 1985.
C. M. Krowne, “Slow-Wave Propagation in Two Types of Cylindrical Waveguides Loaded with a Semiconductor,” IEEE Trans. Microwave Th. Tech., Vol. MTT-33, pp. 335–339, Apr. 1985.
H. Hasegawa, M. Furukawa, and H. Yanai, “Properties of Microstrip Line on Si−SiO2 System,” IEEE Trans. Microwave Th. Tech., Vol. MTT-19, pp. 869–881, Nov. 1971.
R. E. Neidert, “High Accuracy Microwave S-Parameter Measurements on Solid State Devices,” Naval Research Laboratory Report No. 4015, p. 13, June 22, 1979.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Krowne, C.M., Neidert, R.E. Solid state monolithic variable phase shifter with operation into the millimeter wave wavelength regime. Int J Infrared Milli Waves 7, 715–728 (1986). https://doi.org/10.1007/BF01014379
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01014379