Parameter optimization of F−P HgCdTe and InSb bistable devices

  • Ding Lan-ying
  • Chen Jishu


The parameter optimization of HgCdTe and InSb infrared bistable devices of both transmission and reflection types is studied with computer numerical calculation. The results point that the steady state behavior of the devices changs quasi-periodically with the sample thickness L; the output modulation amplitude ΔIT is almost inversely proportional to RB; and the switching power grows nonlinearly with increasing RF, but ΔIT is hardly affected by RF. These conclusions may be useful in guiding the design of such infrared devices.

Key Words

HgCdTe InSb bistable device numerical calculation 


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Copyright information

© Plenum Publishing Corporation 1986

Authors and Affiliations

  • Ding Lan-ying
    • 1
  • Chen Jishu
    • 1
  1. 1.Optics DepartmentShandong UniversityJinanChina

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