Parameter optimization of F−P HgCdTe and InSb bistable devices
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The parameter optimization of HgCdTe and InSb infrared bistable devices of both transmission and reflection types is studied with computer numerical calculation. The results point that the steady state behavior of the devices changs quasi-periodically with the sample thickness L; the output modulation amplitude ΔIT is almost inversely proportional to RB; and the switching power grows nonlinearly with increasing RF, but ΔIT is hardly affected by RF. These conclusions may be useful in guiding the design of such infrared devices.
Key WordsHgCdTe InSb bistable device numerical calculation
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