Abstract
We have shown that a Ga1−xAlxAs/GaAs heterostructure can be used as a sensitive tunable detector of mm-wave/sub-mm-wave radiation. The mechanism for detection requires the application of a magnetic field varying from approximately 0.2T at 94GHz (3.2mm wavelength) to 6.2T at 2500GHz (119μm wavelength). The responsivity and N.E.P. at 3.2mm have been roughly estimated at 200V/W and 5×10−11W/✓Hz respectively. The speed of such a detector could be several orders of magnitude greater than comparable InSb detectors.
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Smith, S.M., Cronin, N.J., Nicholas, R.J. et al. Millimeter and submillimeter detection using Ga1−xAlxAs/GaAs heterostructures. Int J Infrared Milli Waves 8, 793–802 (1987). https://doi.org/10.1007/BF01010721
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DOI: https://doi.org/10.1007/BF01010721