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Far-infrared magnetospectroscopy on epitaxial zero-gap and wide-gap semiconductor layer systems

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Abstract

Far-infrared magnetotransmission measurements have been performed on MBE-grown HgTe and CdTe epilayers. The results on the HgTe samples can be understood by the standard Pidgeon-Brown model for bulk HgTe. For the CdTe layers, transitions were only observed under illumination by visible light. The spectra are dominated by the 1s→2p transition of the shallow hydrogen-like impurity. These transitions are persistent with a life time of the order of magnitude of one second.

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Authors and Affiliations

  1. Institut für Halbleiterphysik und Optik & Hochmagnetfeldanlage der Technischen Universität Braunschweig, Mendelssohnstr. 3, W-3300, Braunschweig, Germany

    P. Kempf & M. von Ortenberg

  2. Physikalisches Institut der Universität Würzburg, Am Hubland, W-8700, Würzburg, Germany

    R. Bicknell-Tassius & A. Waag

Authors
  1. P. Kempf
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  2. M. von Ortenberg
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  3. R. Bicknell-Tassius
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  4. A. Waag
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Kempf, P., von Ortenberg, M., Bicknell-Tassius, R. et al. Far-infrared magnetospectroscopy on epitaxial zero-gap and wide-gap semiconductor layer systems. Int J Infrared Milli Waves 13, 207–213 (1992). https://doi.org/10.1007/BF01010654

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  • DOI: https://doi.org/10.1007/BF01010654

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