Abstract
In high quality semiconductor crystals, occurrence of cyclotron resonance is beautifully reflected on luminescence spectra. This feature is demonstrated in typical elemental semiconductor Ge, both doped and undoped. One obtains new information of kinetics in free carriers, free excitons, bound excitons and electron-hole drops.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. Ge. Baranov, Yu. P. Veshchnov, R. A. Zhitnikov, N. G. Romanov and Yu. G. Shreter: Pis'ma Zh. Eksp. Teor. Fiz. 26 (1977) 369. [JETP Lett. 26 (1977) 249].
R. Romestain and C. Weisbuch: Phys. Rev. Lett. 45 (1980) 2067.
Le Si Dang, G. Neu and R. Romestain: Solid State Commun. 44 (1982) 1187.
I.J. Booth and C.F. Schwerdtfeger: Phys. Stat. Sol. (b) 130 (1985) 749.
I.J. Booth and C.F. Schwerdtfeger: Solid State Commun. 55 (1985) 817.
B.C. Cavenett and E.J. Pakulis: Phys. Rev. B 32 (1985) 8449.
E.J. Pakulis and G.A. Northrop: Appl. Phys. Lett. 50 (1987) 1672.
T. Tomaru, T. Ohyama and E. Otsuka: J. Phys. Soc. Jpn. 58 (1989) 3718.
T. Sanada, T. Ohyama and E. Otsuka: Solid State Commun. 12 (1973) 1201.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Otsuka, E. Optically detected cyclotron resonance in semiconductors. Int J Infrared Milli Waves 11, 299–308 (1990). https://doi.org/10.1007/BF01010522
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01010522