Abstract
The properties of GaAs Schottky barrier diodes as video detectors and mixing elements were investigated in the frequency range from 0.8–2.5 THz. For the most sensitive diode, the video responsivity and system noise temperature were measured as a function of incident laser power. The highest video responsivity was 2,000 V/W at 214μm and 60 V/W at 118μm. For five diodes differing in doping, capacitance, series resistance and anode diameter, the system noise temperature was measured at 214μm and 118μm. The best single sideband (SSB) values are 12,300 K and 24,200 K at 214μm and 118μm, respectively. The system noise temperature versus frequency is given over the range from 0.5–3 THz for two specific diodes demonstrating that the sharpness of the I–V characteristics is only of secondary importance for mixer perfomance at such high frequencies.
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Titz, R.U., Röser, H.P., Schwaab, G.W. et al. Investigation of GaAs Schottky barrier diodes in the THz range. Int J Infrared Milli Waves 11, 809–820 (1990). https://doi.org/10.1007/BF01010134
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DOI: https://doi.org/10.1007/BF01010134