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Resonant-tunneling devices for millimeter-wave generation

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Abstract

Oscillations from resonant-tunneling diodes have been observed up to 200 GHz, and theoretical estimates predict that device performance should extend into the THz range. This paper addresses the issue of the ultimate frequency response and power generation capability of these devices. Techniques recently developed to solve the time-dependent Schrödinger equation are used to predict the rf power vs. frequency obtainable from resonant-tunneling diode oscillators, based on the calculated small-signal response. Factors limiting the rf power output from these devices are presented. Also, recently obtained dc experimental results for the In.53Ga.47As-InxAl1-xAs heterostructure material system grown on InP are presented. Using a quasi-static approximation, the rf power available from these devices under large-signal conditions is estimated.

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Authors and Affiliations

  1. Center for High-Frequency Microelectronics Department of Electrical Engineering and Computer Science, The University of Michigan, 48109, Ann Arbor, Michigan

    R. K. Mains, I. Mehdi & G. I. Haddad

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  1. R. K. Mains
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  2. I. Mehdi
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  3. G. I. Haddad
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Mains, R.K., Mehdi, I. & Haddad, G.I. Resonant-tunneling devices for millimeter-wave generation. Int J Infrared Milli Waves 10, 595–620 (1989). https://doi.org/10.1007/BF01009563

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  • DOI: https://doi.org/10.1007/BF01009563

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