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Performance and materials aspects of Ge:Be photoconductors

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Abstract

Ge:Be photoconductors have been developed for low photon background applications in the 30–50 μm wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Berylliumdoped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of ∼ 10−6 torr. We report an optimum detective quantum efficiency of 46% at a background flux of 1.5×108 photons/second (7×10−13 W). Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

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Authors and Affiliations

  1. Lawrence Berkeley Laboratory, University of California, 94720, Berkeley, California, USA

    N. M. Haegel, E. E. Haller & P. N. Luke

  2. Department of Materials Science and Mineral Engineering, University of California, 94720, Berkeley, California, USA

    N. M. Haegel & E. E. Haller

Authors
  1. N. M. Haegel
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  2. E. E. Haller
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  3. P. N. Luke
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Haegel, N.M., Haller, E.E. & Luke, P.N. Performance and materials aspects of Ge:Be photoconductors. Int J Infrared Milli Waves 4, 945–954 (1983). https://doi.org/10.1007/BF01009319

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  • DOI: https://doi.org/10.1007/BF01009319

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