Abstract
Metal-Insulator-Semiconducor FETs (MIS-FETs) when fabricated from GaInAs semiconductor material offer significant performance improvement at mm-wave frequencies. Higher electron velocity, power-added efficiency, device stability, transconductance and resistance to ionizing radiation are the outstanding features of these devices. Significant improvements in gain-bandwidth product, AM/PM performance, and third-order intermodulation distortion make GAInAs devices attractive for communication and radar equipment.
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References
Gardner, P.D., “GaInAs MISFETs Show Promise in Power Applications,” Microwave and RF, January 1988, page 99.
Cappy, A. and others, “Comparative Potential Performance of Si, GaAs, GaInAs, InP Submicrometer-Gate FETs”, IEEE Transactions on Electron Devices, Vol. ED-27 No. 11, November 1980, page 2158.
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Jha, A.R. Parametric analysis of GaInAs devices for mm-wave applications. Int J Infrared Milli Waves 10, 1181–1191 (1989). https://doi.org/10.1007/BF01009246
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DOI: https://doi.org/10.1007/BF01009246