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Submillimeter wave photoconductivity observation of shallow donors in In0.53Ga0.47As

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Abstract

The hydrogen like 1s → 2p (m=−1,0,+1) transitions of two donors have been observed in high intensity magnetic fields up to 8.5T. The m=−1 transitions ocurred between 2 cm−1 and 25 cm−1. The signature curves for donors in ternary semiconductor In0.53Ga0.47As have now been established.

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Author information

Authors and Affiliations

  1. Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, 02139, Cambridge, MA

    M. N. Afsar & Kenneth J. Button

  2. Lincoln Laboratory, Massachusetts Institute of Technology, 02173, Lexington, MA

    S. H. Groves

Authors
  1. M. N. Afsar
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  2. Kenneth J. Button
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  3. S. H. Groves
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Additional information

Work supported by the U.s. Air Force Office of Scientific Research under Contract # AFOSR-78-3708-D

Supported by the National Science Foundation

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Afsar, M.N., Button, K.J. & Groves, S.H. Submillimeter wave photoconductivity observation of shallow donors in In0.53Ga0.47As. Int J Infrared Milli Waves 4, 127–134 (1983). https://doi.org/10.1007/BF01008971

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  • DOI: https://doi.org/10.1007/BF01008971

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