International Journal of Infrared and Millimeter Waves

, Volume 11, Issue 9, pp 1113–1131 | Cite as

The Mott diode as a heterodyne receiver element

  • James O. Marsh
  • Thomas W. Crowe
  • Jeffrey Hesler
Article

Abstract

This paper considers a novel doping profile for Schottky barrier mixer diodes called the Mott barrier. The structure consists of a metal-semiconductor junction in which the semiconductor's epitaxial layer is very lightly doped and thin enough so that it remains depleted even under substantial forward bias. It has been proposed that Mott barrier diodes will generate less noise and have lower series resistance-junction capacitance products than standard Schottky diodes, thus increasing the sensitivity and cut-off frequency of heterodyne receivers. In this paper, the band structure and electron transport properties of the Mott diode are evaluated. This analysis shows that the Mott diode actually will have a large series resistance-junction capacitance product and excessive hot electron noise, making it a poor candidate for high-frequency applications. Experimental results are presented which substantiate these conclusions.

Keywords

Electron Transport Transport Property Band Structure Epitaxial Layer Schottky Barrier 

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References

  1. [1]
    D.N. Held and A.R. Kerr, “Conversion Loss and Noise of Microwave and Millimeter-Wave Mixers: Part 1-Theory, and Part 2-Experiment,” IEEE Trans. Microwave Theory Tech., Vol. MTT-26, Feb. 1978.Google Scholar
  2. [2]
    T.W. Crowe and R.J. Mattauch, “Analysis and Optimization of Millimeter- and Submillimeter-Wavelength Mixer Diodes,” IEEE Trans. Microwave Theory Tech., Vol. MTT-35, Vol. 2, pp. 159–168, Feb. 1987.Google Scholar
  3. [3]
    F.A. Padovani and R. Stratton, “Field and Thermionic Field Emission in Schottky Barrier Diodes,” Solid-State Electron., Vol. 9, pp. 695–707, 1966.Google Scholar
  4. [4]
    O. Von Roos and K. Wang, “Conversion Losses in GaAs Schottky-Barrier Diodes,” IEEE Trans. Microwave Theory Tech., Vol. MTT-34, No. 1, pp. 183–187, Jan. 1986.Google Scholar
  5. [5]
    M. McColl and M.F. Millea, “Advantages of Mott-Barrier Mixer Diodes,” Proc. IEEE Vol. 51, pp. 499–500, 1973.Google Scholar
  6. [6]
    S.A. Maas,Microwave Mixers, Norwood, MA.: Artech House, pp. 35–38, 1986.Google Scholar
  7. [7]
    S.M. Sze,Physics of Semiconductor Devices, New York: Wiley and Sons, p. 302, 1981.Google Scholar
  8. [8]
    J.A. Copeland, “Diode Edge Effects on Doping Profile Measurements,” IEEE Trans. Electron Devices, Vol. ED-17, No. 5, pp. 404–407, (1970).Google Scholar
  9. [9]
    L.E. Dickens, “Spreading Resistance as a Function of Frequency,” IEEE Trans. Microwave Theory Tech., Vol. MTT-15, No. 2, pp. 101–109 (1967).Google Scholar
  10. [10]
    K.S. Champlin and G. Eisenstein, “Cutoff Frequency of Submillimeter Schottky-Barrier Diodes,” IEEE Trans. Microwave Theory Tech., Vol. MTT-26, No. 1, pp. 31–34, (1978).Google Scholar
  11. [11]
    A.A.M. Saleh,Theory of Resistive Mixers, Cambridge, MA: MIT Press, 1971.Google Scholar
  12. [12]
    W.C.B. Peatman and T.W. Crowe, “Design and Fabrication of 0.5 Micron GaAs Schottky Barrier Diodes for Low-Noise Terahertz Receiver Applications,” Int. J. Infrared and Millimeter Waves, Vol. 11, No. 3, pp. 355–365, March 1990.Google Scholar
  13. [13]
    T.J. Viola and R.J. Mattauch, “Unified Theory of High-Frequency Noise in Schottky Barrier Diodes,” J. Applied Physics, Vol. 44, pp. 2805–2808, June 1973.Google Scholar
  14. [14]
    H. Zirath, “High-Frequency Noise and Current-Voltage Characteristics of MM-Wave Platinum n-n+ GaAs Schottky Barrier Diodes,” J. Applied Physics, Vol. 60, No. 4, pp. 1399–1407, 1986.Google Scholar
  15. [15]
    M. Shur,GaAs Devices and Circuits, New Yory: Plenum Press, pp. 53,82, 1986.Google Scholar

Copyright information

© Plenum Publishing Corporation 1990

Authors and Affiliations

  • James O. Marsh
    • 1
  • Thomas W. Crowe
    • 1
  • Jeffrey Hesler
    • 1
  1. 1.Semiconductor Device Laboratory Department of Electrical EngineeringUniversity of VirginiaCharlottesville

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