Radiative transitions between exciton sub-bands in semiconductors

  • G. K. Vlasov
Article

Abstract

It is shown both theoretically and experimentally, that radiative Auger-recombination of excitons and impact excitation of excitons by hot excitons or electrons in direct-gap semiconductors at appropriate conditions lead to inverse population of exciton and bi-exciton subbands and, consequently, to stimulated submillimeter (far infrared) radiation. In CdS crystals, excited by nitrogen laser at temperatures from 1.4–4.2 K to 300 K, a stimulated submillimeter radiation on exciton transitions was observed. At T=1.4–4.2 K a few milliwatts of total output in 50–120 mkm spectral interval was obtained by Hg- lamp excitation. The strong correlation between phenomena taken place in visible and submillimeter regions was established. Our data permit to obtain the most fulfil picture of exciton and bi-exciton energy spectrum and to explain the structure of P-band in luminescence spectra.

Key words

semiconductors excitons far-infrared radiation inverse population 

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Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • G. K. Vlasov
    • 1
  1. 1.Institute of PhysicsAcademy of Sciences of the Ukrainian SSRKievU.S.S.R.

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