Abstract
The reduction of the equivalent noise temperature in liquidnitrogen-cooled submillimeter-wave mixers by the use of Schottky barriers on InSb instead of GaAs is evaluated by an analytical model that assumes limited local oscillator power and matched impedances. The calculations, executed at 1.0 and 1.8 Thz, take plasma resonance and skin effect into account. For single and multiple contacts on homogeneous semiconductor materials of optimum doping, the noise of InSb diodes is smaller than that of GaAs diodes by a factor of 3 to 14. A simplified model is used to predict the performance of epitaxial structures as well as alternative materials.
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Lieneweg, U. Projected noise in submillimeter-wave mixers with InSb Schottky diodes. Int J Infrared Milli Waves 1, 415–435 (1980). https://doi.org/10.1007/BF01007324
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DOI: https://doi.org/10.1007/BF01007324