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Siliconα-carbide strain transducers

  • Force Measurements
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Measurement Techniques Aims and scope

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Literature cited

  1. Yu. V. Shmartsev et al., High-Melting-Point Diamond Semiconductors [in Russian], Moscow, Izd. Metallurgiya (1964).

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  2. I. V. Rapatskaya and G. E. Rudashevskii, Author's Certificate No. 193769, Byull. Izobr. No. 7 (1967).

  3. C. S. Smith, Physics Rev.,94, 42 (1954).

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  4. Semiconductor Strain Gauges [in Russian], Edit. by M. Din, Moscow, Izd. Énergiya (1965).

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  5. D. Nye, Physical Properties of Crystals [Russian translation], Moscow, IIL (1960).

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  6. M. I. Iglitsyn, M. G. Kosaganova, I. V. Rapatskaya, G. E. Rudashevskii, and M. B. Reifman, Silicon Carbide Strain Gauges and the Effect of Temperature on Their Resistance [in Russian], Moscow, Izd. Giredmet (1967).

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Authors
  1. I. V. Rapatskaya
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  2. G. E. Rudashevskii
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Additional information

Translated from Izmeritel'naya Tekhnika, No. 6, pp. 46–47, June, 1968.

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Rapatskaya, I.V., Rudashevskii, G.E. Siliconα-carbide strain transducers. Meas Tech 11, 771–772 (1968). https://doi.org/10.1007/BF00994283

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  • DOI: https://doi.org/10.1007/BF00994283

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