Conclusions
It is possible by means of silicon diode stabilitrons to protect from overloading dc and ac voltmeters, micro- and milliammeters (with a measuring range of 10–50 mA), ac ammeters with input transformers, as well as equivalent current and voltage circuits in other instruments.
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Literature cited
E. Ya. Pumler, Crystal Diodes and Transistors, [in Russian], Gosenergoizdat, Moscow (1953).
V. S. Bulychev, “Application of Silicon p-n Junctions for Inertialess Protection of Precision Electrical Measuring Instruments from Overloading”. Advanced Scientific Technical and Production Experience, TSITEIN (Central Institute of Information on Technology and Economics). No. 7 (1961).
P. L. Toback, “Protection of Sensitive Elements in Instruments by Means of Silicon Diodes”. Control Engineering,5, 3 (1958).
P. I. Ovsishcher and N. N. Kochkina, Handbook on Semiconductor Diodes and Transistors, [in Russian], Sudpromgiz (State All-Union Shipbuilding Industry Press), Moscow (1961).
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Zel'dich, Y.V. Protection of electrical measuring instruments from overloading by means of silicon diodes. Meas Tech 7, 810–811 (1964). https://doi.org/10.1007/BF00981584
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DOI: https://doi.org/10.1007/BF00981584