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Amplifying transistors with a high input impedance

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Literature cited

  1. J. Lilienfield, US Patent No. 1745175 of January 28, 1930 and No. 1900018 of March 7, 1933.

  2. O. Heil, British patent No. 439457 of March 4, 1935.

  3. W. Sockly and G. L. Pearson, Modulation of conductance of thin films of semiconductors by surface charges. Phys. Rev.,74, (1948), p. 232–233.

    Google Scholar 

  4. “Genealogical table of semiconductor devices.” Elektronika, [Russian translation],36, 17 (1963).

  5. Sa Ts. Proceedings of the Institute of Radio Engineers, [Russian translation],49, 11 (1963), p. 1883–95.

    Google Scholar 

  6. A. V. J. Martin, Les dielectrons et le statistor. Electronique et automatisme, No. 29, (1963), p. 107–110.

    Google Scholar 

  7. A. Martin, Elektronika [Russian translation],36, 24, (1963), pp. 37–39.

    Google Scholar 

  8. H. Schreiber, Der Statistor-ein neuer Feldeffekt-Halbleiter. Internationale Elektronische Rundschau,17, No. 7, (1963), pp. 353–354.

    Google Scholar 

  9. Ya. A. Fedorov, Foundations of Semiconductor Physics, [in Russian], “Sovetskoe radio” Press, Moscow (1963).

    Google Scholar 

  10. I. P. Stepanenko, Foundations of the Theory of Transistors and Transistor Circuits, [in Russian], Gosenergoizdat, Moscow (1963).

    Google Scholar 

  11. E. Milh, Le tecnetron, Toute la Radio,25, Part 2, (1958), p. 47–48.

    Google Scholar 

  12. Das Alkatron, Electronische Rundschau, 14, (1960), pp. 326–327.

    Google Scholar 

  13. R. M. Bird, Solid state electrometer amplifier. Instruments and Control Systems,36, No. 9 (1963).

  14. First field-effect transistor now avialable. Electronic Design,9, No. 7, (1961), pp. 66–67.

  15. VI-e Salon Internationale des Composants Electroniques. Electronische Rundschau,17, No. 4, (1963), pp. 192–196.

  16. O. M. Stuetzer, A crystal amplifier with high input impedance. Proc. IRE,38, No. 8 (1950).

  17. W. Shockley, A unipolar field-effect transistor. Proc. IRE,40, No. 11, (1952), pp. 1365–1376.

    Google Scholar 

  18. G. C. Dacey and I. M. Ross, Unipolar field-effect transistor. Proc. IRE,41, No. 8, (1953), p. 970.

    Google Scholar 

  19. Current Information of the VINITI (All-Union Institute of Scientific and Technical Information), “Electronics” series, No. 45 (1963), Abstract 340.

  20. Current Information of the VINITI, “Electronics” series, No. 41, (1963), abstract 318.

  21. Z. Fel'dman, H. Wilson, and U. Gutierez, Elektronica, [Russian translation],36, 15, (1963), pp. 42–43.

    Google Scholar 

  22. Hofstein and Heimann. Transactions of the Institute of Electrotechnical and Radiotechnical Engineers, [Russian translation], No. 9, (1963), pp. 1182–94.

    Google Scholar 

  23. G. Stone and R. Warner, Field Tetrode, Transactions of the IRE, [Russian translation],49, 7 (1961).

    Google Scholar 

  24. T. Bignell, Elektronica, [Russian translation],36, 10, (1963), pp. 24–27.

    Google Scholar 

  25. A. Van der Ziel, Thermal noise in field-effect transistors. Proc. IRE,50, 8, (1962), p. 1808.

    Google Scholar 

  26. E. Flinor, Elektronika, [Russian translation],36, 15, (1963), pp. 35–39.

    Google Scholar 

  27. Wanless, Elektronika, [Russian translation],36, 44, (1963), pp. 21–25.

    Google Scholar 

  28. Elektronika, [Russian translation],36, 43, (1963), p. 5.

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Golub', S.G., Shul'man, B.R. Amplifying transistors with a high input impedance. Meas Tech 7, 1021–1025 (1964). https://doi.org/10.1007/BF00980739

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