Conclusions
The testing of an experimental installation for measuring the temperature coefficient of voltage and the stability of precision semiconductor stabilitrons with a nominal stabilized voltage between 7 and 13 V and a temperature coefficient of 0.0005% to 0.005% per °C has shown that the rms error in measuring voltage on this installation, with the correction of the reference measures taken into consideration, can be reduced to 0.0002% for an error of about ±0.01°C in maintaining a stable temperature in the thermostatically controlled chambers.
The installation can be recommended for utilization under factory-laboratory conditions, since it provides adequately high measurement precision and it is relatively simple to use.
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Literature cited
P. N. Goryunov, Transactions of the Committee's Institutes, No. 82 (142) (1965), p. 8.
P. N. Goryunov, Transactions of the Committee's Institutes, No. 82 (142) (1965), p. 5.
N. V. Smirnov and I. V. Dunin-Barkovskii, Short Course of Mathematical Statistics for Technical Applications [in Russian], Fizmatgiz, Moscow (1959).
Additional information
Translated from Izmeritel'naya Tekhnika, No. 1, pp. 37–40, January, 1968.
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Goryunov, P.N., Khakhamov, I.V. Reference equipment for investigating the stability and temperature coefficient of silicon stabilitrons. Meas Tech 11, 51–54 (1968). https://doi.org/10.1007/BF00979386
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DOI: https://doi.org/10.1007/BF00979386