Skip to main content
Log in

Investigating the thermal stability of transistor circuits with a high input resistance

  • Published:
Measurement Techniques Aims and scope

Conclusions

On the basis of the above experimental investigations it is possible to state the following. Taking into account the small size of the automatic device for measuring the vibration parameters during the drilling of boreholes and its subjection to considerable temperature effects, it is advisable to use a thermally-stable circuit with a high input resistance of 10 MΩ. The utilization of silicon transistors in this circuit provides completely adequate input resistance for working with piezoelectric vibration transducers up to a temperature of +100°C.

In case it is necessary to raise still further the circuit input resistance, it is advisable to use silicon transistors with a higher current gain β, which are in short supply (for instance, transistors P504, P504A, P505, and P505A).

The use of transistors with a larger β makes it possible to apply a deeper negative feedback, which raises the input impedance and improves the gain stability of the stage with respect to temperature effects. The above circuits can also be used in other measuring and electronic devices which are subjected to considerable ambient temperature effects.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

Literature cited

  1. V. I. Lebedev, Izv. vuz. radiotekhn., No. 3 (1960).

  2. A. M. Lenovenko, in: Problems of Applied Acoustics and Vibration Technology [in Russian], Naukova Dumka, Kiev (1966).

    Google Scholar 

  3. G. P. Petin, Radio, No. 12 (1965).

  4. Yu. I. Gribanov, Measurements in High-Resistance Circuits [in Russian], Énergiya, Moscow (1967).

    Google Scholar 

  5. S. Schwartz, “Semiconductor circuits,” Handbook [Russian translation], IIL, Moscow (1962).

    Google Scholar 

  6. Ya. T. Zagorskii, D. G. Levchenko, and V. M. Nosov, Avtometriya, No. 6 (1966).

  7. G. Goldmann, FRG Patent Class 21a2, 18/08, No. 1143234.

  8. I. P. Stepanenko, Foundations of the Theory of Transistors and Transistor Circuits [in Russian], GÉI, Moscow (1963).

    Google Scholar 

Download references

Authors

Additional information

Translated from Izmeritel'naya Tekhnika, No. 10, pp. 54–55, October, 1970.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Mirsalimov, R.M., Gasanov, T.A. Investigating the thermal stability of transistor circuits with a high input resistance. Meas Tech 13, 1557–1559 (1970). https://doi.org/10.1007/BF00979001

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00979001

Keywords

Navigation